| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist composition which can be suitably used for microphotofabrication using far-UV rays, in particular, ArF excimer laser light and which is free of patterns fall and has excellent properties relating to the surface roughening during etching and to the defocus latitude. SOLUTION: The positive resist composition contains (A) a specified resin which has specified aliphatic cyclic hydrocarbon groups in the side chains and increases the dissolving rate with an alkali developer by the effect of an acid and (B) a compound which produces an acid by irradiation of active rays or radiation. The proportion of the repeating unit corresponding to acrylic monomers in the resin (A) is characteristically in a specified range. |
