| 摘要 |
PURPOSE: A method for forming the dual gate of a semiconductor device is provided to achieve uniform impurity concentration in the channel of a semiconductor substrate and prevent a damage of the semiconductor substrate caused by the wet etching of a gate oxide layer. CONSTITUTION: A first gate oxide layer(120) is formed on a semiconductor substrate(100). A photoresist layer is formed on a high voltage region of the semiconductor substrate and the photoresist layer is used as a mask to implant impurity ions in a low voltage region of the semiconductor substrate. The first gate oxide layer of the low voltage region is removed by wet etching with the use of the photoresist layer as a mask. After removing the photoresist layer, a second oxide layer(150) for the low voltage region is formed on the resultant structure.
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