发明名称 |
THERMAL ANNEAL METHOD FOR MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETIC TUNNEL JUNCTION DEVICE MANUFACTURED BY THE METHOD |
摘要 |
PURPOSE: A magnetic tunnel junction device and a thermal anneal method thereof are provided to improve the TMR(Tunneling Magnetoresistance) rate and optimize the characteristics of the device in a shorter time more effectively by reducing the bent of an oxide layer(Tunnel Barrier Layer). CONSTITUTION: A magnetic tunnel junction device includes an anti-ferromagnetic layer formed of anti-ferromagnetic material, a fixed layer formed on the anti-ferromagnetic layer with a ferromagnetic material, a tunnel barrier layer(16) formed on the fixing layer with an electrically insulating material, and a free layer formed on the tunnel barrier layer with a ferromagnetic material, wherein the magnetic tunnel junction device is subject to rapid thermal anneal by heating at a temperature of 200-400°C for 10sec or less and cooled for 6min or less. |
申请公布号 |
KR20020087640(A) |
申请公布日期 |
2002.11.23 |
申请号 |
KR20010026486 |
申请日期 |
2001.05.15 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
HA, JAE GEUN;LEE, GYEONG IL;LEE, U YEONG;PARK, YEONG JUN;SHIN, GYEONG HO |
分类号 |
G11B5/39;H01F41/30;H01L43/08;H01L43/10;H01L43/12;(IPC1-7):G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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