| 摘要 |
PURPOSE: A method for forming silicide of a semiconductor device is provided to achieve uniform silicide regardless of line width. CONSTITUTION: An LDD region(15) is formed in both sides of a gate(14a) on a semiconductor substrate(11). A source/drain region(17,18) is formed by high impurity doping at insulating sidewalls(16). An RTA(Rapid Thermal Annealing) and cleaning are sequentially performed. A PAI(pre-amorphization implantation) is performed and Ar or Ge ions is implanted to break the oxide film preventing the reaction of a silicon film with a cobalt film.
|
