| 摘要 |
PURPOSE: A method for reproducing indium thin oxide of a thin film transistor display device is provided to recover the defects of ITO electrodes by forming ITO electrodes again on the already formed ITO electrodes. CONSTITUTION: A method for reproducing indium thin oxide of a thin film transistor display device includes the steps of forming gates on a glass substrate and forming a gate insulating film and active areas(4) by depositing an insulating film and an amorphous silicon on the entire surface of the substrate in sequence and patterning the amorphous silicon, forming source and drain electrodes(5,6) apart from each other by a predetermined distance in the centers on the active areas and positioned to side surfaces of the active areas by depositing a metal on the entire surface of the substrate and patterning the metal, exposing the drain electrodes partially via contact holes of a passivation layer(7) deposited on the substrate, forming ITO electrodes(8) to be connected to the drain electrodes by depositing and patterning ITO on the entire surface of the substrate, and forming recovery ITO electrodes(9) by depositing and patterning the ITO on the entire surface again if the already deposited ITO electrodes have defects such as short. |
