| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure for achieving high-breakdown voltage characteristics by restraining kinking phenomenon, in a field effect transistor having a short gate length of 0.2μm or smaller. SOLUTION: In the field effect transistor, a buffer layer 2, a channel layer 3, a Schottky layer 4, and an ohmic contact layer 5 are formed successively on a compound semiconductor substrate 1, an ohmic electrode 7 is formed on the ohmic contact layer 5, and a gate electrode 6 is formed on the Schottky layer; and at least up to the uppermost layer in the channel layer 3 from the uppermost layer in the ohmic contact layer 5 for forming a source electrode is removed by etching, and with the source electrode and a channel being connected electrically. Holes accumulated in the channel layer 3 are discharged by an electrode 8 for discharging the holes, and generation of kinks is inhibited, thus achieving high breakdown voltage characteristics.
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