发明名称 |
SUPERMAGNETOSTRICTION THIN FILM ELEMENT AND METHOD OF MANUFACTURING IT |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a supermagnetostriction thin film element, which shows large magnetostriction characteristics even to a small magnetic field, and to provide a method of manufacturing the supermagnetostriction thin film element which can develop the supermagnetostriction characteristics in a simple manufacturing process. SOLUTION: An supermagnetostriction thin film element having a substrate and a thin film is formed on the substrate and consists of a supermagnetostriction material. The thin film consists of a vapor-grown RT (The R is a Y-containing rare-earth element and the T is a transition metal containing Fe as its main component.) system of the supermagnetostriction material. When the percentage of the R at the point of intersection of the incongruent melting temperature of an RT2 Laves phase and the liquid phase line of a Laves phase on the state diagram of the supermagnetostriction material is assumed to be x at%, the percentage of the R is set at x±3 at%. It is desirable that the R is Tb, the T is Fe and the percentage of the Tb is set at 37 to 43 at%. Moreover, it is desirable that the internal stress of the thin film is set lower than 100 MPa. For reduction of the internal stress, a heat treatment is effective.</p> |
申请公布号 |
JP2002335027(A) |
申请公布日期 |
2002.11.22 |
申请号 |
JP20010137294 |
申请日期 |
2001.05.08 |
申请人 |
FDK CORP;NAGANO PREFECTURE;WAKIWAKA HIROYUKI |
发明人 |
KIYOMIYA TERUO;UMEMOTO YOSHIYUKI;WATANABE TOSHIHIKO;WAKIWAKA HIROYUKI;YAMADA HIROTSUGU;MAKIMURA MIKA |
分类号 |
C03C17/09;C22C38/00;C23C14/14;H01F1/03;H01F10/14;H01L41/12;H01L41/22;H01L41/316;H01L41/47 |
主分类号 |
C03C17/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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