PROGRAMMING METHOD FOR NON-VOLATILE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a programming method for a program non-volatile semiconductor memory which can perform properly data program operation for a twin memory cell. SOLUTION: This method is a method for programming data for a memory element 108B of a twin memory cell (i). A word line WL1 is set to word line selection voltage for program (1 V), a control gate CG [i+1] is set to control gate voltage for program (5.5 V), and a control gate CG [i] is set to override voltage (2.5 V). A bit line BL [i+1] is set to bit line voltage (5 V) for program, and a bit line BL [i] is connected to a constant current source 404.