| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a highly reliable bump structure of semiconductor device which is strong against thermal stresses with which lead-free mounting can be realized, while suppressing cracking. SOLUTION: An electrode pad 13 for external connection; comprising principally of aluminum, is formed on an insulation film 11, while being surrounded by a passivation film 12. A diffusion preventing Cr layer 14 is formed tightly on the electrode pad 13 and first and second Cu layers 15 and 16 are formed tightly thereon. An Sn-Ag based fusion forming layer 17 is formed tightly on the second Cu layer 16.</p> |
