| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a metal cap formed on a wiring layer, where the metal cap will not cause the electromigration resistance of the wiring layer to decrease and halation to appear on the resist film formed at the upper section, and to provide the manufacturing method of the semiconductor device. SOLUTION: An Al/Cu wiring layer 30 is formed on an interlayer insulating film 10 via a barrier metal 20, and a cap metal 40 made of a composition gradient film 41 and a low-reflection TiN film 42 is formed on the Al/Cu wiring layer 30. A composition gradient layer film 41 is formed by sputtering a surface nitrided Ti target 3' with Ar gas. In the composition, contained N concentration decreases with the increase in film thickness from a composition close to TiN, at a section in contact with the wiring layer 30, thus changing the composition to closer to one of pure Ti.
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