| 摘要 |
PURPOSE: A bit line precharge circuit is provided, which can reduce current consumption in a self-refresh mode by precharging a bit line/bit bar line after equalizing them. CONSTITUTION: According to a semiconductor memory device having a memory cell, a pair of bit lines(BL,/BL) connected to the memory cell and a sense amp amplifying data loaded on the bit line, the bit line precharge circuit comprises a level control part(420) including an equalization unit(MN5) and the first and the second precharge unit(MN3,MN4). The equalization unit is connected between the pair of bit lines and equalizes the pair of bit lines in response to an input of a bit line equalization signal. The first and the second precharge unit have channels connected in serial between the pair of bit lines and transmit a bit line precharge voltage(VBLP) to the bit lines in response to the input of the bit line precharge signal.
|
