发明名称 INFORMATION STORAGE DEVICE AND INFORMATION OPERATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a new information storage device and an information operation device. SOLUTION: A material having photoconductive effect having an energy band gap and trap level is used. A plurality of element regions formed on the material, a means for casting a first light to each of the element regions, a means for casting a second light to each of the element regions, and a means for measuring a current flowing in each of the element regions are installed. The first light has photon energy greater than the energy band gap of the material. The second light has photon energy smaller than the energy band gap of the material. By irradiation with the first light, information is written in each of the element regions. By irradiation with the second light, the information written in each of the element regions can be read. By irradiation with the second light, at least a part of the information written in each of the element regions can be erased.
申请公布号 JP2002335001(A) 申请公布日期 2002.11.22
申请号 JP20020098163 申请日期 2002.04.01
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 INUSHIMA TAKASHI;RIMANTAS BAITOKUS;TERAMOTO SATOSHI
分类号 G11C11/42;H01L31/0248 主分类号 G11C11/42
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