PENDEOEPITAXIAL METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR LAYER ON SAPPHIRE SUBSTRATE, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURE MANUFACTURED BY THE SAME

摘要

PROBLEM TO BE SOLVED: To manufacture an inexpensive and/or highly obtainable gallium nitride device. SOLUTION: A gallium nitride semiconductor layer is manufacturing by providing at least one column and at least one groove in a lower gallium nitride layer formed on a sapphire substrate by etching the gallium nitride layer. At least one column thus formed contains a gallium nitride top section and gallium nitride sidewalls. At least one groove thus formed contains a sapphire bottom. The gallium nitride side walls are grown laterally into the formed at least one groove, by which the gallium nitride semiconductor layer is formed. Before conducting the step of lateral growing of the sidewalls, the sapphire bottom is masked for preventing the growth of the gallium nitride from the bottom of the groove from interfering with the lateral growth of the sidewalls of at least one column thus formed into at least one groove thus formed.