| 摘要 |
PROBLEM TO BE SOLVED: To prevent an insulating film at the bevel region of a well from being etched, in a process of forming embedded wiring. SOLUTION: A protective film 17 is formed at the bevel region of a wafer 1, and the surface of an insulation film 16 at the bevel region is covered. Then, a photoresist film 18 is formed on the insulation film 16, and then the photoresist film 18 is subjected to patterning. There, the photoresist film 18 is formed so as to partially overlap the protective film 17, at the bevel region of the wafer 1 for formation. After that, the insulation film 16 and the etching stopper film 15 are etched with the photoresist film 18 as a mask.
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