METHOD OF BARRIER METAL SURFACE TREATMENT PRIOR TO CU DEPOSITION FOR IMPROVING WHICH ADHESION AND TRENCH FILLING CHARACTERISTICS

摘要

PROBLEM TO BE SOLVED: To provide a method of pretreating a barrier metal layer, by which deposition and adhesion properties of a copper film onto the barrier metal layer and the characteristics of filling of copper provided on the barrier metal layer in a trench and a via hole are improved to reduce variation in copper deposition caused by a copper precursor substance. SOLUTION: In this method, a barrier metal layer of a partially completed integrated circuit device is pretreated, prior to a copper film is deposited thereon. This method includes steps of providing a partially completed integrated circuit device, including the barrier metal layer, forming a pretreated barrier metal layer by exposing the barrier metal layer to a high temperature which is higher than 200 deg.C for at least 30 seconds, and depositing a copper film on the pretreated barrier metal layer.