| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor, having a high current gain and a high withstand voltage, and to provide an epitaxial compound semiconductor wafer from which the transistor is manufactured, and to provide a method of manufacturing the wafer. SOLUTION: The field effect transistor, having a high current gain and a high breakdown voltage is obtained by simultaneously or alternately supplying an indium compound and at least one kind of compound selected from among an antimony compound, a bismuth compound, a tellurium compound, and a selenium compound to a part or all of the body of a phosphorous-containing compound semiconductor layer 7, contained in the compound semiconductor epitaxial wafer used for manufacturing the field effect transistor as parts of the raw materials.
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