发明名称 APPARATUS AND METHOD FOR HEAT TREATMENT
摘要 PROBLEM TO BE SOLVED: To solve the problem, when a wafer boat which carries many semiconductor wafers is carried in the reaction chamber of vertical type thermal treatment equipment, of a long time being required, until the temperature of the wafer is stabilized. SOLUTION: When the wafer boat is carried in the reaction chamber, a set temperature value which is different from a target temperature is outputted, and when, for example, the carrying-in operation of the boat is completed or before or after the carrying-in operation is completed, the set temperature value is changed toward a second set temperature value which corresponds to the target temperature. Here, what is referred to as the target temperature. The set temperature value which is different from the target temperature is a first set temperature value (or third set temperature value) which is lower (or higher) than the target temperature. It is also possible to output the first set temperature value, and when for example, the carrying-in operation of the wafer boat is completed or before or after the carrying-in operation is completed, to change the first set temperature value to the third set temperature value which is higher than the target temperature, and successively, to gradually lower the third set temperature value toward the target temperature.
申请公布号 JP2002334844(A) 申请公布日期 2002.11.22
申请号 JP20010346077 申请日期 2001.11.12
申请人 TOKYO ELECTRON LTD 发明人 EJIMA MUTSUHITO
分类号 C23C16/46;C23C16/52;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/46
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