| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing wafer subjected to reactive gas treatment, and to provide a method and apparatus for performing reactive gas treatment by which the occurrence of moisture can be suppressed at the time of performing reactive gas treatment, such as epitaxial growth, etc., on a wafer manufactured by the manufacturing method. SOLUTION: Using the method of manufacturing wafer, a silicon wafer W, to be subjected to reactive gas treatment which is performed by causing a reaction between the surface of the wafer and a reactive gas, is manufactured; and the method includes a step of forming a silicon oxide film 10 on the rear surface of the wafer W by the CVD method, and a step of modifying the film 10 by heat-treating the wafer W at a temperature between 700 deg.C and 1,000 deg.C, after the film 10 has been formed in the preceding step.
|
