| 摘要 |
<p>PROBLEM TO BE SOLVED: To avoid occurrence of wafer breakage caused by insufficient strength due to generation of a spatial gap between a surface protecting film and a parabolically curved surface part of an epitaxial layer formed on a wafer in the beveled part along the periphery of the wafer, having a beveling quantity of 100-500μm, when the thickness of the wafer is to be finished at 150μm or thinner in accordance with the thinning trend on the wafer for manufacturing a high-efficiency and low-loss semiconductor device. SOLUTION: This method is constituted by grinding an incoming wafer, then mirror-polishing the ground wafer to reduce the beveling quantity to 10-50μm, and forming an epitaxial layer having a thickness of 30μm or less. Thereby, the influence of the curved surface or of a crown-shaped protrusion of the epitaxial layer generated in a peripheral part of the wafer is suppressed, and since adequate strength for the backside grinding is assured after forming the device elements, this method can contribute to thinning of the wafer.</p> |
