| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting diode which can be constituted by using a light emitting element chip which generates light whose wavelength is shorter than that of blue light. SOLUTION: In a nitride semiconductor light emitting element wherein an N-type gallium nitride based compound semiconductor layer, a light emitting layer and a P-type gallium nitride based compound semiconductor layer are formed on one main surface of a translucent substrate, an SiO2 layer containing phosphor which absorbs a part of the light generated from the light emitting layer and can generate a light whose wavelength is longer than that of the absorbed light formed on the other main surface of the translucent substrate. By outputting a light via the SiO2 layer, a luminous color can be obtained only by the light generated from the phosphor, and a light emitting diode having long life can be obtained. |
