| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory having a row repair circuit in which a plurality of redundant word liens are arranged in a plurality of cell array blocks by the prescribed number of pieces respectively in the same way, and repair efficiency is improved by enabling to repair a defective word line for any cell array block. SOLUTION: This device is provided with a plurality of cell array blocks 0-7 in which a plurality of redundant word lines RWL are arranged by the prescribed number of pieces in the same way, a plurality of row repair fuse boxes of the same number of pieces as a plurality of redundant word lines RWL and in which they are divided into the same number of pieces for respective cell array blocks 0-7 and arranged, and a repair means in which a plurality of row repair fuse boxes and a plurality of redundant word lines correspond each other by one to one and which repair a defective word line.
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