| 摘要 |
PROBLEM TO BE SOLVED: To effectively cleaning reaction products such as silicon dioxide and the like, attached to the central part of the ceiling part of a process chamber of a high-density plasma CVD system. SOLUTION: A current plate 13 is installed under a remote plasma-cleaning gas feed port 5 in a process chamber 2 for forming film on a semiconductor wafer 1, and the remote plasma-cleaning gas, introduced horizontally, is hit to the current plate 13 to detour toward the ceiling of the process chamber 2. After accelerating a reaction between the reaction products such as silicon dioxide film 12 and the like, formed frequently on the central part of the ceiling part of a process chamber 2 during film forming and the remote process-cleaning gas by prolonging their residence time in the process chamber 2, the vaporized reaction products are exhausted from the exhaust bent 6.
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