METHOD FOR PLASMA-ETCHING OF IRIDIUM-TANTALUM-OXYGEN ELECTRODE AND POST-ETCH CLEANING

摘要

PURPOSE: A method for fabricating an electrode in an integrated circuit is provided to pattern an Ir-Ta-O electrode material in a ferroelectric apparatus by using etching gas including fluorine which is used to increase an etch rate of the Ir_Ta-O electrode material and by using high temperature deionized(DI) water as a cleaner so that the sidewall residue generated after an etch process is melted. CONSTITUTION: A silicon-base substrate is prepared. Semiconductor structures are formed on the substrate to form an integrated substrate structure. A layer of an electrode material is deposited on the substrate structure. The layer of the electrode material is patterned to form electrode elements. The layer of the electrode material is plasma-etched in a plasma reactor in an etching gas atmosphere having a fluorine component therein. The substrate structure and the electrode elements are cleaned in a distilled water bath.