| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high energy radiation-sensitive resist material which has an excellent sensitivity at a wavelength of <=200 nm, especially <=170 nm, resolving power and resistance to plasma etching, shows a small absorption at exposure wavelength of F2 excimer lasers, easily forms fine patterns that are vertical to a base plate and is suitable for a fine patten-forming material for preparing ultra LSI. SOLUTION: A polymer compound contains a repeating unit of formula (1) (wherein R<1> is a bivalent, cyclic 3-20C hydrocarbon group which may be a bridge-containing cyclic hydrocarbon group, optionally containing hetero atoms such as oxygen, sulfur or a cyano group; R<2> is a cyclic 3-20C hydrocarbon group having a valence number of (c+1) which may be a bridge-containing cyclic hydrocarbon group, optionally containing hetero atoms such as oxygen, sulfur; R<3> is an acid-unstable group; (a) and (b) are each a positive number; and (c) is an integer of 1-4). |
