| 摘要 |
PROBLEM TO BE SOLVED: To easily form a right side protective film and a ridge electrode of a semiconductor element having a ridge shape, without complicating the process. SOLUTION: The manufacturing method comprises a step for growing a clad layer 102, an optical guide layer 104, a multi-quantum well layer 106, an optical guide layer 108, a clad layer 110 and a cap layer 112 on a substrate 100 one above another as shown in (a); forming a resist mask 114 on the cap layer 112 as shown in (b); forming a ridge, using a dry etcher as shown in (c) forming a silicon nitride(SiN) protective film 116, using a CVD apparatus, as shown in (d), lifting off to expose the top of the ridge, using a remover, as shown in (e), and forming an anode 118 and a cathode 120, as shown in (f).
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