| 摘要 |
PROBLEM TO BE SOLVED: To reduce the amount of increase in device pitch and channel width as much as possible, as compared with a general MOS transistor in a MOS transistor having high ESD breakdown withstand amount. SOLUTION: A trench region 21 is formed in a drain region 14 of the MOS transistor, the inside of the trench region 21 is filled with an insulator 22, and at the same time, the drain region 14 is extended along the surface of the trench region 21.
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