| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for improving the film quality of a thin film formed by electroplating method. SOLUTION: In depositing a Cu film by the electroplating method, a voltage is applied between a cathode electrode 27 and an anode electrode 28 by a constant potential source 25, such that the electric potential of the cathode 27 is lower than the oxidation-reduction potential, found from the relation E=-0.059 pH and the electric potential of the anode electrode 28 is higher than the oxidation-reduction potential found from the relation E=1.23-0.059 pH, where pH is the hydrogen-ion exponent of the plating solution.
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