| 摘要 |
<p>PROBLEM TO BE SOLVED: To make crystals grow aligning in the same direction at growing of the crystals through hot annealing. SOLUTION: After a semiconductor film is formed, a crystalline semiconductor film is formed, by adding a crystallization promoting metallic element to part of the film and heating the film, so that crystals are made to grow from the part to which the metallic element is added to another part to which the metallic element is not added. Then a semiconductor device is manufactured by patterning the crystalline semiconductor film and forming a source region, a drain region, and a channel forming region in the patterned crystalline semiconductor film, and the crystalline semiconductor film is patterned, so that the crystals grow in the moving direction of carriers which move through the channel-forming region and the crystalline semiconductor film does not contain a part where the metallic element is added to.</p> |
