| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a low operating voltage and good stability of the transverse mode. SOLUTION: The semiconductor laser element 10 has a structure composed of first contact layer 14, a first clad layer 16, an active layer 20, a second clad layer 24, a second contact layer 26, and a second electrode 30 laminated one above another. The second clad layer 24 is composed of an upper and lower layers 24A, 24B; the first clad layer 14, the active layer 20 and the lower layer 24A of the second clad layer have mesa structures; the upper layer 24B of the second clad layer and the second contact layer 26 have ridge structures; an insulation layer 40 is formed on a part of the lower layer 24A of the second clad layer corresponding to the top face of the mesa structure, so as to cover at least part of both sides of the upper layer 24B of the second clad layer; and a metal layer 42 having substantially the same width as that of the mesa structure is formed from the top face of the insulation layer 40 to the top face of the second electrode 30.
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