| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which power consumption can be reduced without reducing sense operation speed and without supplying electric charges larger than required for a memory cell. SOLUTION: An external power source potential ext.Vdd is reduced, and supplied directly to a sense amplifier operation voltage generating circuit 400. During pre-charge, when the external power source potential ext.Vdd is lower than the lowest limit value in specifications, a VDC circuit 410 supplies a potential being equal to the external power source potential ext.Vdd to a sense power source line VSH, when it is higher than the lowest limit value in specifications, the VDC circuit 410 supplies a potential being equal to the lowest limit value in specifications to the sense power source line VSH.
|
