发明名称 |
Crystal growth method for nitride semiconductor and formation method for semiconductor device |
摘要 |
Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.
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申请公布号 |
US2002170489(A1) |
申请公布日期 |
2002.11.21 |
申请号 |
US20020121257 |
申请日期 |
2002.04.11 |
申请人 |
BIWA GOSHI;OKUYAMA HIROYUKI;DOI MASATO;OOHATA TOYOHARU |
发明人 |
BIWA GOSHI;OKUYAMA HIROYUKI;DOI MASATO;OOHATA TOYOHARU |
分类号 |
C23C16/34;C30B25/02;H01L21/20;H01L21/205;H01L33/12;H01L33/32;H01S5/323;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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