发明名称 |
Layered hard mask and dielectric materials and methods therefor |
摘要 |
A damascene structure includes a hard mask layer that is applied in a liquid phase to a line dielectric layer. Contemplated hard mask layers comprise a Si-N bond and are densified such that the etch resistivity of the hard mask layer is greater than the etch resistivity of the line dielectric layer and the via dielectric layer in the damascene structure. Particularly preferred hard mask layers include polyperhydrosilazane.
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申请公布号 |
US2002172898(A1) |
申请公布日期 |
2002.11.21 |
申请号 |
US20010860993 |
申请日期 |
2001.05.17 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
FORESTER LYNN |
分类号 |
H01L21/3065;H01L21/311;H01L21/312;H01L21/768;(IPC1-7):G03F7/00 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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