PLASMA PROCESSING DEVICE, AND METHOD OF CLEANING THE SAME

摘要

This plasma processing device comprises an upper electrode (13) and a lower electrode (14) that are disposed in a reaction vessel (11), the first electrode having a VHF band high frequency wave fed from a VHF band high frequency power source (32), the lower electrode having mounted thereon a base plate (12) and driven by a vertical drive mechanism (35). The plasma processing device has a control section (36) that, during the cleaning step for cleaning after film formation on a base plate (12), causes the vertical movement mechanism to move the lower electrode to reduce the clearance between the upper and lower electrodes to define a narrowed space and that, in this narrowed space, starts cleaning with plasma of predetermined high density. In the cleaning step, step cleaning is effected. This increases the efficiency of utilization of cleaning gas to reduce the amount of discharge gas and increase the cleaning rate. Further, the amount of use of process gas is reduced to reduce the process cost.