| 摘要 |
A method of manufacturing a semiconductor device forms a agglomeration-free seed layer on the inner surface of a recessed portion so as to restrain voids in a metal filled by the plating method. The method includes forming a barrier metal layer on a surface of the recessed portion, forming a seed layer on the barrier metal layer, and forming a metal filled in the recessed portion by the plating method making use of the seed layer. The method further includes retaining the water for 50 seconds or more, after forming the barrier metal layer, in a chamber with a vacuum state set therein other than the seed layer forming chamber.
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