| 摘要 |
Method for manufacturing components on an SOI wafer. In the previously known methods, the differing electrical requirements of the MOS and bipolar transistors in respect of the thickness of the silicon layer lying on the insulating intermediate layer hinder the integration of the different types of components on one wafer. According to the new method, the requirements regarding the thickness, in particular those for the bipolar transistors, are substantially reduced by implanting buried silicided areas because the previous "buried-layer" is replaced by a thin, low ohmic silicide layer. Furthermore, the HF characteristics of the MOS-transistors can be improved by the buried silicide areas.
|
