| 发明名称 |
Method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions |
| 摘要 |
This invention relates to a method and system for finite element modeling of enhanced magnetoresistance in thin film semiconductors containing at least one metallic inclusion therein. The method and system utilizes finite element analysis techniques as a function of the applied magnetic field and the geometry of the device for comparing the device characteristics with predetermined qualities and modifying the device to achieve a correlation between the device characteristics and the predetermined qualities.
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| 申请公布号 |
US2002173941(A1) |
申请公布日期 |
2002.11.21 |
| 申请号 |
US20010796304 |
申请日期 |
2001.02.28 |
| 申请人 |
HINES DANIEL R.;SOLIN STUART A.;ZHOU TAO;MOUSSA JONATHAN E.;RAM-MOHAN LAKSHMINARAYANAPURAM RAMDAS;SULLIVAN, JR. JOHN M. |
发明人 |
HINES DANIEL R.;SOLIN STUART A.;ZHOU TAO;MOUSSA JONATHAN E.;RAM-MOHAN LAKSHMINARAYANAPURAM RAMDAS;SULLIVAN, JR. JOHN M. |
| 分类号 |
H01L43/08;G06F17/50;(IPC1-7):G06G7/62 |
主分类号 |
H01L43/08 |
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