发明名称 |
Implanted hidden interconnections in a semiconductor device for preventing reverse engineering |
摘要 |
A camouflaged interconnection for interconnecting two spaced-apart regions of a common conductivity type in an integrated circuit or device and a method of forming same. The camouflaged interconnection comprises a first region forming a conducting channel between the two spaced-apart regions, the conducting channel being of the same common conductivity type and bridging a region between the two spaced-apart regions, and a second region of opposite conductivity to type, the second region being disposed between the two spaced-apart regions of common conductivity type and over lying the conducting channel to camouflage the conducting channel from reverse engineering.
|
申请公布号 |
US2002173131(A1) |
申请公布日期 |
2002.11.21 |
申请号 |
US20020132523 |
申请日期 |
2002.04.24 |
申请人 |
CLARK WILLIAM M.;BAUKUS JAMES P.;CHOW LAP-WAI |
发明人 |
CLARK WILLIAM M.;BAUKUS JAMES P.;CHOW LAP-WAI |
分类号 |
H01L27/04;H01L21/74;H01L21/822;H01L21/8234;H01L27/02;H01L27/088;(IPC1-7):H01L21/44 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|