发明名称 Semiconductor processing component
摘要 A semiconductor processing component includes a quartz body characterized by silicon oxide filled micro cracks. The component is utilized as a processing component in a semiconductor furnace system. The quartz body is prepared by cleaning the component to remove a build up silicon layer and to expose micro cracks in the surface of the component and to etch the micro cracks into trenches. A silicon layer is applied onto the processing component body and at least a portion of the silicon is oxidized to silica to fill the trenches in the surface of the component body.
申请公布号 US2002173117(A1) 申请公布日期 2002.11.21
申请号 US20020199273 申请日期 2002.07.22
申请人 GORCZYCA THOMAS BERT;LAZZERI MARGARET ELLEN;AHLGREN FREDERIC FRANCIS 发明人 GORCZYCA THOMAS BERT;LAZZERI MARGARET ELLEN;AHLGREN FREDERIC FRANCIS
分类号 H01L21/306;H01L21/762;(IPC1-7):H01L21/823;H01L21/336;H01L21/76;H01L29/00 主分类号 H01L21/306
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