| 发明名称 |
DEEP SLIT ISOLATION WITH CONTROLLED VOID |
| 摘要 |
An isolation region for a memory array in which the isolation region includes at least one trench region having sidewalls that extend to a bottom surface and a slit region formed beneath the final trench region, wherein the slit region is narrower than the overlying trench regions and has a void formed intentionally therein is provided.
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| 申请公布号 |
US2002171118(A1) |
申请公布日期 |
2002.11.21 |
| 申请号 |
US20010861274 |
申请日期 |
2001.05.18 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MANDELMAN JACK A.;DIVAKARUNI RAMACHANDRA;FALTERMEIER JOHNATHAN E.;TONTI WILLIAM R. |
| 分类号 |
H01L21/762;H01L21/764;(IPC1-7):H01L29/00;H01L21/823 |
主分类号 |
H01L21/762 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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