| 摘要 |
<p>The invention concerns a method for doping or diffusion, or oxidation of silicon wafers (4), said wafers being introduced into the chamber (2) of an oven (1) wherein is introduced at least a gas for performing the doping or diffusion or oxidation process. The invention is characterised in that it consists in: simultaneously with the introduction and passage of gas into the chamber (2) of the oven (1), continuously subjecting the latter to a depression of constant value. The device for doping or diffusion or oxidation of the silicon wafers (4) comprises an oven (1) provided with a chamber (2) wherein are introduced said wafers, said oven including at least an inlet tube (5a, 5b, 5c) for introducing at least a gas into the chamber (2) to carry out said processes and at least an outlet tube (6) for extracting the gas whereto is connected a suction unit (7) for generating in the chamber (2) a constant and controlled depression.</p> |
