CMOS STRUCTURE WITH MAXIMIZED ACTIVATION OF THE POLYSILICON GATE DOPANT AND METHOD OF MANUFACTURING THE SAME

摘要

A method for manufacturing a semiconductor device, comprising the steps of: forming a gate electrode (13) on a main surface of a semiconductor substrate (10) with a gate oxide layer (12) therebetween; forming source/drain regions (18) in portions of the main surface adjacent to the gate electrode; and characterised by the following step of: selectively doping the gate electrode and the source/drain regions, so that the gate electrode has an impurity concentration higher than that of the source/drain regions.