发明名称 |
Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
摘要 |
A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.
|
申请公布号 |
US2002173172(A1) |
申请公布日期 |
2002.11.21 |
申请号 |
US20020103331 |
申请日期 |
2002.03.20 |
申请人 |
LOBODA MARK JON;HWANG BYUNG KEUN |
发明人 |
LOBODA MARK JON;HWANG BYUNG KEUN |
分类号 |
C23C16/42;C23C16/30;C23C16/32;H01L21/312;H01L21/314;H01L21/316;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C23C16/42 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|