发明名称 Plasma enhanced chemical deposition with low vapor pressure compounds
摘要 A method for plasma enhanced chemical vapor deposition of low vapor monomeric materials. The method includes flash evaporating a polymer precursor forming an evaporate, passing the evaporate to a glow discharge electrode creating a glow discharge polymer precursor plasma from the evaporate, and cryocondensing the glow discharge polymer precursor on a substrate as a cryocondensed polymer precursor layer, and crosslinking the cryocondensed polymer precursor layer thereon, the crosslinking resulting from radicals created in the glow discharge polymer precursor plasma.
申请公布号 US2002172778(A1) 申请公布日期 2002.11.21
申请号 US20010811874 申请日期 2001.03.19
申请人 AFFINITO JOHN D.;GRAFF GORDON L.;MARTIN PETER M.;GROSS MARK E.;MAST ERIC;HALL MICHAEL G. 发明人 AFFINITO JOHN D.;GRAFF GORDON L.;MARTIN PETER M.;GROSS MARK E.;MAST ERIC;HALL MICHAEL G.
分类号 C08F20/12;B05D7/24;C23C16/448;C23C16/50;(IPC1-7):C23C16/00 主分类号 C08F20/12
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