发明名称 |
Plasma enhanced chemical deposition with low vapor pressure compounds |
摘要 |
A method for plasma enhanced chemical vapor deposition of low vapor monomeric materials. The method includes flash evaporating a polymer precursor forming an evaporate, passing the evaporate to a glow discharge electrode creating a glow discharge polymer precursor plasma from the evaporate, and cryocondensing the glow discharge polymer precursor on a substrate as a cryocondensed polymer precursor layer, and crosslinking the cryocondensed polymer precursor layer thereon, the crosslinking resulting from radicals created in the glow discharge polymer precursor plasma.
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申请公布号 |
US2002172778(A1) |
申请公布日期 |
2002.11.21 |
申请号 |
US20010811874 |
申请日期 |
2001.03.19 |
申请人 |
AFFINITO JOHN D.;GRAFF GORDON L.;MARTIN PETER M.;GROSS MARK E.;MAST ERIC;HALL MICHAEL G. |
发明人 |
AFFINITO JOHN D.;GRAFF GORDON L.;MARTIN PETER M.;GROSS MARK E.;MAST ERIC;HALL MICHAEL G. |
分类号 |
C08F20/12;B05D7/24;C23C16/448;C23C16/50;(IPC1-7):C23C16/00 |
主分类号 |
C08F20/12 |
代理机构 |
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代理人 |
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地址 |
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