发明名称 Fabricating a molecular electronic device having a protective barrier layer
摘要 A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a barrier layer is provided to protect a molecular layer sandwiched between a bottom wire layer and a top wire layer from degradation during patterning of the top wire layer. A molecular electronic device structure and a memory system that are formed from this fabrication process are described.
申请公布号 US2002171148(A1) 申请公布日期 2002.11.21
申请号 US20010815844 申请日期 2001.03.21
申请人 CHEN YONG 发明人 CHEN YONG
分类号 H01L27/10;G11C13/02;G11C16/02;H01L27/00;H01L49/02;H01L51/00;H01L51/05;H01L51/40;(IPC1-7):H01L21/44;H01L21/48;H01L23/48;H01L29/40 主分类号 H01L27/10
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