Process for detaching semiconductor structures located on a main side of a substrate comprises producing a layer on a further main side of the substrate opposite the main side

摘要

Process for detaching semiconductor structures located on a first main side (101) of a substrate (100) comprises producing a layer on a second main side (102) of the substrate opposite the first main side; structuring the layer so that regions of the substrate are exposed on the second main side; removing substrate material in the exposed regions; bending the substrate so that bending forces are exerted on substrate sites on which previous substrate material was removed; and detaching the semiconductor structures located on the first main side of the substrate using the bending action on the substrate. An Independent claim is also included for a semiconductor substrate. Preferred Features: The layer is structured using lithography or etching. The substrate material is removed in the exposed regions using etching. A material is selected for layer material which selectively can be etched.