发明名称 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
摘要 One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
申请公布号 US2002172820(A1) 申请公布日期 2002.11.21
申请号 US20020112698 申请日期 2002.03.29
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 MAJUMDAR ARUN;SHAKOURI ALI;SANDS TIMOTHY D.;YANG PEIDONG;MAO SAMUEL S.;RUSSO RICHARD E.;FEICK HENNING;WEBER EICKE R.;KIND HANNES;HUANG MICHAEL;YAN HAOQUAN;WU YIYING;FAN RONG
分类号 B82B1/00;B82B3/00;G02B6/10;H01L21/20;H01L23/49;H01L29/06;H01L29/12;H01L33/06;H01L33/24;H01L35/00;H01L41/09;H01L41/18;H01S5/34;(IPC1-7):B32B19/00;H01S3/30;H01S5/00;C30B23/00;D02G3/00;C30B25/00;C30B28/14 主分类号 B82B1/00
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