发明名称 |
Method for manufacturing GaN-based LED |
摘要 |
A method for manufacturing GaN-based LED (Gallium-Nitride based Light-Emitting Diode) is provided for remedy of the defect of central notch in the far field beam pattern of a conventional GaN-based LED by relocating a pair of P-and N-electrodes and reforming the shape of an illuminating surface thereof.
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申请公布号 |
US2002173062(A1) |
申请公布日期 |
2002.11.21 |
申请号 |
US20010861402 |
申请日期 |
2001.05.17 |
申请人 |
CHEN LUNG-CHIEN;LAN WEN-HOW;CHIEN FEN-REN |
发明人 |
CHEN LUNG-CHIEN;LAN WEN-HOW;CHIEN FEN-REN |
分类号 |
H01L33/32;H01L33/38;H01L33/42;(IPC1-7):H01L21/00 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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