发明名称 Method for manufacturing GaN-based LED
摘要 A method for manufacturing GaN-based LED (Gallium-Nitride based Light-Emitting Diode) is provided for remedy of the defect of central notch in the far field beam pattern of a conventional GaN-based LED by relocating a pair of P-and N-electrodes and reforming the shape of an illuminating surface thereof.
申请公布号 US2002173062(A1) 申请公布日期 2002.11.21
申请号 US20010861402 申请日期 2001.05.17
申请人 CHEN LUNG-CHIEN;LAN WEN-HOW;CHIEN FEN-REN 发明人 CHEN LUNG-CHIEN;LAN WEN-HOW;CHIEN FEN-REN
分类号 H01L33/32;H01L33/38;H01L33/42;(IPC1-7):H01L21/00 主分类号 H01L33/32
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