| 摘要 |
For the scale-down and large-scale integration of a transistor, the operation speed is increased by suppressing a short channel effect to reduce the capacity of a drain or source and gate. A method for manufacturing a channel gate type field effect transistor (100A) comprises the formation of an impurity introduced layer (9) serving as a source or drain in a semiconductor substrate (1), the penetration of a first channel (20) in this semiconductor substrate (1) to form a side wall made of an insulation material on the side wall of the first channel (20), the penetration of a second channel (22) in the bottom of the first channel with the side wall (21) as a mask to form a gate insulation film (5) over the bottom of the second channel (22), and the formation of a gate (G) to fill the second channel (22) and the first channel (20).
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