发明名称 |
Flash memory structure having double celled elements and method for fabricating the same |
摘要 |
A flash memory array having a plurality of bitlines, at least one wordline and a plurality of flash memory flash memory elements, wherein each flash memory element includes two transistors for storing two bits, and wherein each flash memory element is positioned between a pair of adjacent bitlines. A method is also presented for fabricating the flash memory array having the plurality of flash memory elements, wherein each flash memory element is configured for storing two bits.
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申请公布号 |
US2002171101(A1) |
申请公布日期 |
2002.11.21 |
申请号 |
US20010860736 |
申请日期 |
2001.05.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSU LOUIS L.;JOSHI RAJIV V.;RADENS CARL;MANDELMAN JACK A.;TONTI WILLIAM R. |
分类号 |
G11C16/04;H01L21/8247;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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