发明名称 Method for fabricating a thin film and apparatus for fabricating a thin film
摘要 The back side space of a tubular member is evacuated by means of a pressure difference-creating means constructed of a pressure regulating chamber and a pump, and then, the pressure in the back side space of the tubular member is set to be tenth or below of the pressure in the front space of the tubular member. Then, a raw material gas is introduced and excited to generate a plasma raw material gas, which is introduced into the tubular member and onto an inner wall of the tubular member, efficiently commensurate with the pressure difference created by means of the pressure difference-creating means. As a result, a desired thin film is formed on the inner wall of the tubular member through the chemical reaction of the plasma raw material gas.
申请公布号 US2002170495(A1) 申请公布日期 2002.11.21
申请号 US20020144505 申请日期 2002.05.13
申请人 NGK INSULATORS, LTD. 发明人 NAKAMURA YUKINORI;KONDO YOSHIMASA;OTAKE NAOTO
分类号 C23C16/04;C23C16/44;C23C16/455;C23C16/515;H05H1/24;(IPC1-7):H05H1/24;C23C16/00 主分类号 C23C16/04
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